Bipolar transistor with high voltage resistance above 300V
Ideal for switching high-voltage DC-DC converters!
High-voltage bipolar transistors with a breakdown voltage of over 300V, adapted to high-voltage environments.
- Company:イサハヤ電子
- Price:Other
1~2 item / All 2 items
Ideal for switching high-voltage DC-DC converters!
High-voltage bipolar transistors with a breakdown voltage of over 300V, adapted to high-voltage environments.
Gate drive for high-side MOSFET, perfect for audio amplifiers!
It has high voltage resistance and low output capacity, making it ideal for audio equipment such as gate driving for high-side MOSFETs and discrete amplifiers with high power supply voltage. The composite type ensures pairing of hFE and VBE by incorporating adjacent chips, allowing for application in differential amplifier circuits and current mirror circuits.